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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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ISCB18154 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCB18154 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISCB18154 · DESCRIPTION · Drain Current ID=160A@ TC=25℃ · Drain Source Voltage : VDSS= 120V(type) · Fast Switching Speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS . · Designed for high current, high speed switching, switch mode power supplies (SMPS) ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 120 V VGS Gate-Source Voltage ± 30 V ID Drain Current-continuous@ TC=25℃ 160 A IDM Pulse Drain Current 480 A Ptot Total Dissipation@TC=25℃ 250 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.6 ℃ /W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃ /W |
유사한 부품 번호 - ISCB18154 |
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유사한 설명 - ISCB18154 |
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