IXFN38N80Q2 datasheet(1/5 Pages) IXYS

부품명	IXFN38N80Q2

상세설명	N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R

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제조업체	IXYS [IXYS Corporation]

홈페이지	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

800

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

800

V

GS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C38

A

I

DM

T

C = 25°C, pulse width limited by TJM

150

A

I

AR

T

C = 25°C38

A

E

AR

T

C = 25°C75

mJ

E

AS

T

C = 25°C

4.0

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

20

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C = 25°C

735

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.063in) from case for 10s (Plus247, TO-264) 300

°C

V

ISOL

50/60Hz, RMS t =1 min

SOT-227B

2500

V~

I

ISOL < 1mA t = 1s

3000

V~

M

d

Mounting torque

TO-264

0.9/8 Nm/lb.in.

Terminal torque

SOT-227B

1.5/13 Nm/ib.in.

F

C

Mounting force

PLUS-247 22...130/5...30 N/lb

Weight

PLUS247

g

TO-264

10

g

SOT-227B

30

g

HiPerFETTM

Power MOSFETs

Q2-Class

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low Q

g

Low intrinsic R

g

Features

Double metal process for low gate

resistance

International standard packages

Epoxy meet UL 94 V-0, flammability

classification

Avalanche energy and current rated

Fast intrinsic Rectifier

miniBLOC package version with

Aluminum Nitrate isolation

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 3mA

800

V

GS(th)

V

DS = VGS, ID = 8 mA

2.0

4.5

V

I

GSS

V

GS = ±30 VDC, VDS = 0

±200 nA

I

DSS

V

DS = VDSS

T

J =

25

°C50 µA

V

GS = 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 • ID25

220 m

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

G = Gate

D = Drain

S = Source

TAB = Drain

DS99150A(09/04)

TO-264 AA (IXFK)

S

G

D

D (TAB)

V

DSS

=

800 V

I

D25

=

38 A

R

DS(on)

=

220 m

Ω

t

rr ≤

≤≤≤≤ 250 ns

IXFK 38N80Q2

IXFN 38N80Q2

IXFX 38N80Q2

PLUS 247TM (IXFX)

G

D

Preliminary Data Sheet

miniBLOC, SOT-227 B (IXFN)

E153432

G

S*

D

* Either Source terminal can be used as

main or Kelvin source terminal

D (TAB)

유사한 부품 번호 - IXFN38N80Q2

제조업체	부품명	데이터시트	상세설명
IXYS Corporation	IXFN38N80Q2	141Kb / 5P	HiPerFET Power MOSFETs Q2-Class

More results

유사한 설명 - IXFN38N80Q2

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IXFN38N80Q2 데이터시트(PDF) 1 Page - IXYS Corporation

IXFN38N80Q2 데이터시트(HTML) 1 Page - IXYS Corporation

유사한 부품 번호 - IXFN38N80Q2

유사한 설명 - IXFN38N80Q2

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