© TT electronics plc

General Note

TT Electronics reserves the right to make changes in product specification without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

High Reliability NPN Silicon

Phototransistor

OP803, OP804, OP805 (TX, TXV)

Issue B

08/2016 Page 2

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

Storage Temperature Range

65° C to +150° C

Opera ng Temperature Range

55° C to +125° C

Collector Emi er Voltage

30 V

Emi er Collector Voltage (applies to all OP800 and OP830 devices)

5 V

Lead Soldering Temperature [

1/16 inch (1.6mm) fro case for 5 seconds with soldering iron]

(1)

260° C

Power Dissipa on

(2)

250 mW

Collector Base Voltage

30 V

Emi er Base Voltage

5 V

Input Diode

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

On State Collector Current

OP803 (TX, TXV)

OP804 (TX, TXV

OP805 (TX, TXV)

4.0

7.0

15.0

8

22

mA

2(3)

Collector Emi er Dark Current

100

nA

100

μA

Collector Base Breakdown Voltage

30

V

Emi er Collector Breakdown Voltage

7.0

V

Collector Emi er Satura on Voltage

0.40

V

(2)(3)

Rise Time

OP804 (TX, TXV)

OP805 (TX, TXV)

10.0

15.0

Fall Time

OP804 (TX, TXV)

OP8045 (TX, TXV)

10.0

15.0

μs

Notes:

(1)

RMA ux is recommended. Dura on can be extended to 10 seconds maximum when ow soldering.

(2)

Derate linearly 2.5 mW/° C above 25° C.

(3)

Light source is an un ltered rungsten lamp operated at a temperature of 2870 K