전자부품 데이터시트 검색엔진 |
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AS339 데이터시트(PDF) 3 Page - Diodes Incorporated |
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AS339 데이터시트(HTML) 3 Page - Diodes Incorporated |
3 / 12 page AS339/339A Document number: DS36838 Rev. 3 - 2 3 of 12 www.diodes.com May 2018 © Diodes Incorporated AS339/339A Functional Block Diagram +INPUT -INPUT Q5 Q6 Q1 Q2 Q3 Q4 Q7 Q8 OUTPUT V CC Absolute Maximum Ratings (Note 4) Symbol Parameter Rating Unit VCC Supply Voltage 40 V VID Differential Input Voltage 40 V VIN Input Voltage -0.3 to 40 V IIN Input Current (VIN < -0.3V) (Note 5) 50 mA — Output Short-Circuit to Ground Continuous — PD Power Dissipation (TA = +25°C) SO-14 890 mW TSSOP-14 790 TJ Operating Junction Temperature +150 °C TSTG Storage Temperature Range -65 to +150 °C TLEAD Lead Temperature (Soldering, 10 Seconds) +260 °C Notes: 4. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. 5. This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the comparators to go to the V+ voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than -0.3 VDC (at +25 oC). |
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