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CSR2930800BA 데이터시트(PDF) 2 Page - List of Unclassifed Manufacturers

부품명 CSR2930800BA
상세설명  FLASH MEMORY CMOS 8M (1M x 8/512K x 16) BIT
PDF  50 Pages
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제조업체  ETC [List of Unclassifed Manufacturers]
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CSR2930800BA 데이터시트(HTML) 2 Page - List of Unclassifed Manufacturers

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CSR2930800BA-90
2
A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The CSR2930800BA are erased when shipped from the factory.
The devices feature single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low VCC detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7,
by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been
completed, the devices internally reset to the read mode.
The CSR2930800BA memories electrically erase the entire chip or all bits within a sector simultaneously via
Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM
programming mechanism of hot electron injection.
s PACKAGES
48-pin Plastic TSOP (I)
48-pin Plastic FBGA
48-pin Plastic SCSP
(FPT-48P-M19)
(BGA-48P-M12)
(WLP-48P-M03)
Marking Side
(WLP-48P-M03)



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