AOW296 datasheet(2/8 Pages) AOSMD

2 / 8 page

AOW296/AOWF296

Symbol

Min

Typ

Max

Units

BVDSS

100

VDS=100V, VGS=0V

TJ=55°C

IGSS

±100

VGS(th)

Gate Threshold Voltage

2.3

2.9

3.4

7.9

9.7

TJ=125°C

13.6

16.6

9.4

12.2

mΩ

gFS

VSD

0.7

Ciss

2785

Coss

238

Crss

0.25

0.55

0.85

Ω

Qg(10V)

Qgs

11.5

Qgd

Qoss

Output Charge

VGS=0V, VDS=50V

tD(on)

8.5

tD(off)

mΩ

VGS=10V, VDS=50V, ID=20A

Total Gate Charge

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Gate resistance

f=1MHz

IDSS

µA

Zero Gate Voltage Drain Current

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

RDS(ON)

Static Drain-Source On-Resistance

Gate Source Charge

Gate Drain Charge

SWITCHING PARAMETERS

Turn-On DelayTime

VDS=0V, VGS=±20V

Maximum Body-Diode Continuous Current

AOW296

Input Capacitance

Gate-Body leakage current

Diode Forward Voltage

DYNAMIC PARAMETERS

VGS=6V, ID=20A

Reverse Transfer Capacitance

VGS=0V, VDS=50V, f=1MHz

VDS=VGS, ID=250µA

Output Capacitance

Forward Transconductance

Turn-Off DelayTime

VGS=10V, VDS=50V, RL=2.5Ω,

RGEN=3Ω

Turn-On Rise Time

IS=1A, VGS=0V

VDS=5V, ID=20A

VGS=10V, ID=20A

Maximum Body-Diode Continuous Current

AOWF296

tD(off)

trr

Qrr

210

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT

ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE

PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge

Body Diode Reverse Recovery Time

IF=20A, di/dt=500A/µs

Turn-Off DelayTime

Turn-Off Fall Time

RGEN=3Ω

IF=20A, di/dt=500A/µs

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The Power

dissipation P

DSM is based on R

θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on

the user's specific board design.

B. The power dissipation P

D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Single pulse width limited by junction temperature T

J(MAX)=150°C.

D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T

J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

I. The spike duty cycle 5% max, limited by junction temperature T

J(MAX)=125°C

Rev.1.0: February 2017

www.aosmd.com

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