ACE1933B datasheet(1/6 Pages) ACE

부품명	ACE1933B

상세설명	N-Channel MOSFET

PDF	6 Pages

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제조업체	ACE [ACE Technology Co., LTD.]

홈페이지	http://www.ace-ele.com

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ACE1933B

N-Channel MOSFET

VER 1.1

1

Description

The ACE1933B uses advanced trench technology to provide excellent RDS(ON) and low gate charge

and operation with gate voltages as low as 1.8v. This device is suitable for use as a high switching

applications.

Features

 V

DS=20V

 I

D=0.15A (VGS=10V)

 R

DS(ON) ≤

3

mΩ @ V

GS=4.5V

 R

DS(ON) ≤

6

mΩ@ V

GS=1.8V

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±8

V

Drain Current (Continuous)

TA=25℃

ID

0.15

A

TA=70℃

0.12

Drain Current (Pulsed)

IDM

0.8

A

Power Dissipation

TA=25℃

PD

0.3

W

Operating temperature / storage temperature

TJ/TSTG

-55~150

℃

Packaging Type

SOT-23-3

Ordering information

ACE1933B XX + H

SOT-23-3

Description

Function

1

G

Gate

2

S

Source

3

D

Drain

BM : SOT23-3

Pb - free

Halogen - free

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ACE1933B 데이터시트(PDF) 1 Page - ACE Technology Co., LTD.

ACE1933B 데이터시트(HTML) 1 Page - ACE Technology Co., LTD.

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