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2SB963 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB963 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website: www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Darlington Power Transistor 2SB963 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1mA, IB= 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC=-0.5A ,IB= -50mA -1.5 V VBE(sat)1 Base-Emitter Saturation Voltage IC=-0.5A ,IB= -50mA -2.0 V ICBO Collector Cutoff Current VCB=-60V, IE= 0 -10 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μ A hFE-1 DC Current Gain IC= -0.2A ; VCE= -2V 1000 - hFE-2 DC Current Gain IC= -0.5A ; VCE= -2V 6000 30000 |
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