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MBM29PL64LM90PCN 데이터시트(PDF) 42 Page - SPANSION |
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MBM29PL64LM90PCN 데이터시트(HTML) 42 Page - SPANSION |
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42 / 69 page ![]() MBM29PL64LM90/10 41 s s s s ERASE AND PROGRAMMING PERFORMANCE s s s s TSOP (1) PIN CAPACITANCE Notes : • Test conditions TA = +25°C, f = 1.0 MHz • DQ15/A-1 pin capacitance is stipulated by output capacitance. s s s s FBGA PIN CAPACITANCE Notes : • Test conditions TA = +25°C, f = 1.0 MHz • DQ15/A-1 pin capacitance is stipulated by output capacitance. Parameter Limits Unit Remarks Min Typ Max Sector Erase Time — 1 15 s Excludes programming time prior to erasure Programming Time — 100 3000 µs Excludes system-level overhead Effective Page Programming Time (Write Buffer Programming) — 23.5 — µs Chip Programming Time — — 600 s Absolute Maximum Programming Time (16 words) —— 6 ms Non programming within the same page Erase/Program Cycle 100,000 — — cycle — Parameter Symbol Test Setup Value Unit Typ Max Input Capacitance CIN VIN = 0 8 10 pF Output Capacitance COUT VOUT = 0 8.5 12 pF Control Pin Capacitance CIN2 VIN = 0 8 10 pF Reset pin and WP/ACC Pin Capacitance CIN3 VIN = 0 20 25 pF Parameter Symbol Test Setup Value Unit Typ Max Input Capacitance CIN VIN = 0 8 10 pF Output Capacitance COUT VOUT = 0 8.5 12 pF Control Pin Capacitance CIN2 VIN = 0 8 10 pF Reset pin and WP/ACC Pin Capacitance CIN3 VIN = 0 15 20 pF |
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