| 전자부품 데이터시트 검색엔진 |
|
CSD30N30 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
CSD30N30 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 Isc N-Channel MOSFET Transistor CSD30N30 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 30 V VGS(th) Gate Threshold Voltage VDS=±20V; ID=0.25mA 1.0 3.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=20A 3 4 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V ± 0.1 μ A IDSS Drain-Source Leakage Current VDS=24V; VGS= 0V 1 μ A VSDF Diode forward voltage ISD=20A, VGS = 0 V 1.2 V |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |