BC856S datasheet(2/2 Pages) DIOTEC

2 / 2 page

BC856S, BC857S

Characteristics

Kennwerte

Tj = 25°C

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis

- VCE = 5 V

- IC = 2 mA

hFE

220

–

475

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 1)

- IC = 10 mA

- IB = 0.5 mA

- IC = 100 mA

- IB = 5 mA

- VCEsat

–

300 mV

650 mV

Base-Emitter-voltage – Basis-Emitter-Spannung 1)

- VCE = 5 V

- IC = 2 mA

- IC = 10 mA

- VBE

600 mV

–

750 mV

820 mV

Collector-Base cutoff current – Kollektor-Basis-Reststrom

- VCB = 30 V

E open

- ICBO

–

15 nA

Emitter-Base cutoff current – Emitter-Basis-Reststrom

- VEB = 5 V

C open

- IEBO

–

100 nA

Gain-Bandwidth Product – Transitfrequenz

- VCE = 5 V, - IC = 10 mA, f = 100 MHz

100 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, - IE =ie = 0, f = 1 MHz

CCBO

–

4.5 pF

Thermal resistance junction to ambient (per device)

Wärmewiderstand Sperrschicht – Umgebung (pro Bauteil)

RthA

< 420 K/W 2)

Disclaimer: See data book page 2 or website

Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

http://www.diotec.com/

[%]

tot

120

100

[°C]

150

100

Power dissipation versus ambient temperature )

Verlustleistung in Abh. von d. Umgebungstemp. )

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