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L8002G-R20-R 데이터시트(PDF) 5 Page - Unisonic Technologies |
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L8002G-R20-R 데이터시트(HTML) 5 Page - Unisonic Technologies |
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5 / 6 page ![]() L8002 Preliminary CMOS IC UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-B55a T Y PI CAL APPLI CAT I ON CI RCU I T There are three major functions provided by UTC L8002: support negative voltage, bias control circuit, and FET protesting circuit. The negative voltage is generated using internal oscillator. It only needs an ac coupled capacitor CNB 47nF and a negative voltage bypass capacitor CSUB 47nF. The UTC L8002 devices have been designed to protect the external FETs from adverse operating conditions. With a JFET connected to any bias circuit, the gate output voltage of the bias circuit can not exceed the range -2V to 0.7V, under any conditions including powerup and powerdown transients. Should the negative bias generator be shorted or overloaded so that the drain current of the external FETs can no longer be controlled, the drain supply to FETs is shut down to avoid damage to the FETs by excessive drain current. The following diagrams show the L8002 in typical LNB applications. Within each FET gain stage the numbering system indicates how the bias stages relate to the application circuits. |
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