| 전자부품 데이터시트 검색엔진 |
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IXBH2N250 데이터시트(PDF) 4 Page - IXYS Corporation |
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IXBH2N250 데이터시트(HTML) 4 Page - IXYS Corporation |
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4 / 5 page ![]() IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXBH2N250 IXBT2N250 Fig. 7. Transconductance 0 0.4 0.8 1.2 1.6 2 2.4 01 23 45 67 89 IC - Amperes TJ = - 40 oC 25 oC 125 oC Fig. 9. Gate Charge 0 2 4 6 8 10 12 14 16 012 345 678 9 10 11 QG - NanoCoulombs VCE = 1kV I C = 2A I G = 1mA Fig. 11. Reverse-Bias Safe Operating Area 0 1 2 3 4 5 6 7 500 750 1000 1250 1500 1750 2000 2250 2500 VCE - Volts TJ = 125 oC RG = 47Ω dv / dt < 10V / ns Fig. 10. Capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 VCE - Volts f = 1 MHz Cies Coes Cres Fig. 12. Maximum Transient Thermal Impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second Fig. 8. Forward Voltage Drop of Intrinsic Diode 0 1 2 3 4 5 6 0 0.4 0.8 1.2 1.6 2 2.4 2.8 VF - Volts TJ = 125 oC TJ = 25 oC |
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