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OPB830 데이터시트(PDF) 4 Page - TT Electronics.

부품명 OPB830
상세설명  Slotted Optical Switch
PDF  8 Pages
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제조업체  TTELEC [TT Electronics.]
홈페이지  http://www.ttelectronics.com/
Logo TTELEC - TT Electronics.

OPB830 데이터시트(HTML) 4 Page - TT Electronics.

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OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A.2
10/08
Page 4 of 8
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Slotted Optical Switch
OPB830 and OPB840 Series (L & W)
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode LED (See OP240 for additional information—for reference only)
VF
Forward Voltage
-
-
1.7
V
IF = 20 mA
IR
Reverse Current
-
-
100
µA
VR = 2 V
Output Transistor (See OP550 for additional information—for reference only)
V(BR)CEO
Collector-Emitter Breakdown Voltage
30
-
-
V
IC = 1 mA
V(BR)ECO
Emitter-Collector Breakdown Voltage
5
-
-
V
IE = 100 µA
ICEO
Collector-Emitter Dark Current
-
-
100
nA
VCE = 10 V
Notes:
(1)
Derate linearly 1.67 mW/° C above 25° C for L Series.
(2)
RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(3)
Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and
ketones.
(4)
The W Series includes wire terminations of 24” (610 mm) 7-strand, 26 AWG UL insulated wire on each terminal. Each device
incorporates a wire strain relief at the housing surface. The insulation functions and colors are: anode (red), cathode (black),
phototransistor collector (white) and phototransistor emitter (green).
(5)
All parameters tested using pulse technique.
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Storage and Operating Temperature
L Series
(1)
W Series
(1)
-40° C to +85°C
-40° C to +80°C
Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron]
(2)
260°C
Input Diode
Forward DC Current
50 mA
Reverse DC Voltage
2 V
Power Dissipation
(1)
100 mW
Output Phototransistor
Collector-Emitter Voltage
30 V
Emitter-Collector Voltage
5 V
Power Dissipation
(1)
100 mW
Peak Forward Current (1 µs pulse width, 300 pps)
1 A
Collector DC Current
30 mA



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