BUP30 datasheet(1/2 Pages) ISC

부품명	BUP30

상세설명	isc Silicon NPN Power Transistors

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon NPN Power Transistors

BUP30

DESCRIPTION

·

Low Collector Saturation Voltage

: VCE(sat)= 0.4V(Max)@ IC=6A

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for relay drivers, high-speed inverters, converters,

and other general high-current switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

50

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

30

A

PC

Collector Power Dissipation

@ TC=25℃

35

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

유사한 부품 번호 - BUP30

제조업체	부품명	데이터시트	상세설명
Siemens Semiconductor G...	BUP300	338Kb / 7P	IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
	BUP302	419Kb / 7P	IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
	BUP303	431Kb / 7P	IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
	BUP304	378Kb / 7P	IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
	BUP305	383Kb / 7P	IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)

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BUP30 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

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