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71321LA55JGI8 데이터시트(PDF) 8 Page - Integrated Device Technology |
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71321LA55JGI8 데이터시트(HTML) 8 Page - Integrated Device Technology |
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8 / 18 page ![]() 6.42 IDT71321SA/LA and IDT71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges 8 T im ing Wa ve for m of Re a d Cycle N o. 2 , Eit he r Side (3) NOTES: 1. Timing depends on which signal is asserted last, OE or CE. 2. Timing depends on which signal is de-asserted first, OE or CE. 3. R/W = VIH and OE = VIL, and the address is valid prior to or coincidental with CE transition LOW. 4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD. T im ing Wa ve for m of Re a d Cycle N o. 1 , Eit he r Side (1) NOTES: 1. R/W = VIH, CE = VIL, and is OE = VIL. Address is valid prior to the coincidental with CE transition LOW. 2. tBDD delay is required only in the case where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relationship to valid output data. 3. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD. ADDRESS DATAOUT tRC tOH PREVIOUS DATA VALID tAA tOH DATA VALID 2691 drw 06 tBDDH (2,3) BUSYOUT CE tACE tAOE tHZ tLZ tPD VALID DATA tPU 50% OE DATAOUT CURRENT ICC ISS 50% 2691 drw 07 (4) (1) (1) (2) (2) (4) tLZ tHZ |
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