2SC2671F datasheet(1/3 Pages) PANASONIC

부품명	2SC2671F

상세설명	For UHF Band Low-Noise Amplification

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제조업체	PANASONIC [Panasonic Semiconductor]

홈페이지	http://www.panasonic.com/industrial/

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Transistors

1

Publication date: March 2003

SJC00122CED

2SC2671F

Silicon NPN epitaxial planar type

For UHF band low-noise amplification

■ Features

• Low noise figure NF

• High maximum unilateral power gain G

UM

• High transition frequency f

T

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

15

V

Collector-emitter voltage

VCER

14

V

(Resistor between B and E) *

Emitter-base voltage (Collector open)

VEBO

2V

Collector current

IC

80

mA

Collector power dissipation

PC

600

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base cutoff current (Emitter open)

ICBO

VCB = 10 V, IE = 01

µA

Emitter-base cutoff current (Collector open)

IEBO

VEB = 1 V, IC = 01

µA

Forward current transfer ratio

hFE

VCE

= 8 V, I

C

= 40 mA

50

150

300



Transition frequency

fT

VCE = 8 V, IC = 40 mA, f = 0.8 GHz

3.5

5.5

GHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

0.8

1.5

pF

(Common base, input open circuited)

Foward transfer gain

S

21e

2

VCE = 8 V, IC = 40 mA, f = 0.8 GHz

9

12

dB

Maximum unilateral power gain

GUM

VCE

= 8 V, I

C

= 40 mA, f = 0.8 GHz

10

13

15

dB

Noise figure

NF

VCE = 8 V, IC = 40 mA, f = 0.8 GHz

2.0

3.2

dB

Second inter modulation distortion *

IM2

VCE = 8 V, IC = 40 mA, f1 = 200 MHz

50

60

dB

f2

= 500 MHz, V

O

= 100 dBµ/75 Ω

Third inter modulation distortion *

IM3

VCE = 8 V, IC = 40 mA, f1 = 600 MHz

75

86

dB

f2

= 500 MHz, V

O

= 100 dBµ/75 Ω

■ Electrical Characteristics T

a = 25°C ± 3°C

5.0±0.2

0.7±0.1

0.45

+0.15

–0.1

2.5

+0.6

–0.2

0.45

+0.15

–0.1

2.5

12 3

+0.6

–0.2

4.0±0.2

Unit: mm

1: Base

2: Emitter

3: Collector

TO-92-B1 Package

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: See measurement circuit

Note) *:RBE = 1 kΩ

f1

Signal generator

Converter (75

Ω)

(50

Ω)

Converter (75

Ω)

(50

Ω)

Converter (75

Ω)

(50

Ω)

Mixer

(75

Ω)

Under

test part

DC power

supply

Spectrum

analyzer

f2

Signal generator

유사한 부품 번호 - 2SC2671F

제조업체	부품명	데이터시트	상세설명
Panasonic Semiconductor	2SC2671F	37Kb / 2P	Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

More results

유사한 설명 - 2SC2671F

제조업체	부품명	데이터시트	상세설명
Panasonic Semiconductor	2SC2671	37Kb / 2P	Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
	2SC3704	37Kb / 2P	Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
	2SC3829	38Kb / 2P	Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
	2SC3937	37Kb / 2P	Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
	2SC4808	37Kb / 2P	Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
	2SC4835	37Kb / 2P	Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
	2SC4968	37Kb / 2P	Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
	2SC5019	38Kb / 2P	Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
	2SC5295J	66Kb / 3P	For 2 GHz Band Low-Noise Amplification
	2SC5556	65Kb / 3P	For UHF Band Low-Noise Amplification

More results

2SC2671F 데이터시트(PDF) 1 Page - Panasonic Semiconductor

2SC2671F 데이터시트(HTML) 1 Page - Panasonic Semiconductor

유사한 부품 번호 - 2SC2671F

유사한 설명 - 2SC2671F

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