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2SC5265LS 데이터시트(PDF) 1 Page - Sanyo Semicon Device |
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2SC5265LS 데이터시트(HTML) 1 Page - Sanyo Semicon Device |
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1 / 4 page ![]() 2SC5265LS No.5321-1/4 Features • High breakdown voltage(VCBO=1200V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1200 V Collector-to-Emitter Voltage VCEO 600 V Emitter-to-Base Voltage VEBO 9V Collector Current IC 4A Collector Current (Pulse) ICP 8A Collector Dissipation PC 2W Tc=25 °C30 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB=600V, IE=0 10 µA ICES VCE=1200V, RBE=0 1.0 mA Collector-to-Emitter Sustain Voltage VCEO(sus) IC=100mA, IB=0 600 V Emitter Cutoff Current IEBO VEB=9V, IC=0 1.0 mA Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN5321A 2SC5265LS Inverter-Controlled Lighting Applications Package Dimensions unit : mm 2079D [2SC5265LS] 11502 TS IM TA-3430 / 20599 TH (KT) / 40196 TS (KOTO) TA-0644 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Triple Diffused Planar Silicon Transistor 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) 0.7 2.55 2.55 1.2 0.9 0.75 1.2 4.5 2.8 12 3 10.0 3.2 |
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