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2SC5376F 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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2SC5376F 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page ![]() 2SC5376F 2002-01-16 1 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications · Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA · High Collector Current: IC = 400 mA (max) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 400 mA Base current IB 50 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55 to 125 °C Marking Equivalent Circuit (top view) Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2HA1A F A Type Name hFE Classification |
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