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¡ Semiconductor

MSM511000C/CL

AC Characteristics (2/2)

Read Command Set-up Time

Read Command Hold Time

Read Command Hold Time referenced to RAS

Write Command Set-up Time

Write Command Hold Time

Write Command Hold Time from RAS

Write Command Pulse Width

Write Command to RAS Lead Time

Write Command to CAS Lead Time

Data-in Set-up Time

Data-in Hold Time

Data-in Hold Time from RAS

CAS to WE Delay Time

Column Address to WE Delay Time

RAS to WE Delay Time

CAS Active Delay Time from RAS Precharge

RAS to CAS Set-up Time (CAS before RAS)

RAS to CAS Hold Time (CAS before RAS)

CAS Precharge WE Delay Time

Parameter

Symbol

MSM511000

C/CL-45

MSM511000

C/CL-50

MSM511000

C/CL-60

Unit

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

Note

8

8

9

10

10

9

9

9

9

tRCS

tRCH

tRRH

tWCS

tWCH

tWP

tCWL

tRWL

tDS

tDH

tDHR

tCWD

tAWD

tRWD

tCPWD

tRPC

tCSR

tCHR

tWCR

Min.

0

0

0

0

10

10

14

14

0

12

35

14

24

45

33

0

10

25

35

Max.

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—ns

Min.

0

0

0

0

10

10

14

14

0

13

40

14

26

50

35

0

10

25

40

Max. Min.

0

0

0

0

10

10

15

15

0

15

50

15

30

60

40

0

10

30

50

Max.

(VCC = 5 V ±10%, Ta = 0°C to 70°C) Note 1, 2, 3

MSM511000

C/CL-70

Min.

0

0

0

0

15

15

20

20

0

15

55

20

35

70

45

0

10

30

55

Max.

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