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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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ES3DV 데이터시트(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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ES3DV 데이터시트(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 6 page  ES3DV Taiwan Semiconductor 2 Version:B1708 THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-lead thermal resistance per diode RӨJL 17 °C/W Junction-to-ambient thermal resistance per diode RӨJA 50 °C/W ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT Forward voltage per diode (1) IF = 3A, TJ = 25°C VF - 0.9 V Reverse current @ rated VR per diode (2) TJ = 25°C IR - 10 µA TJ = 100°C - 500 µA Junction capacitance 1 MHz, VR=4.0V CJ 45 - pF Reverse recovery time IF=0.5A , IR=1.0A IRR=0.25A trr - 20 ns Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX PACKAGE PACKING ES3DV H R7 G SMC 850 / 7" Plastic reel R6 SMC 3,000 / 13" Paper reel M6 SMC 3,000 / 13" Plastic reel V7 Matrix SMC 850 / 7" Plastic reel V6 Matrix SMC 3,000 / 13" Plastic reel EXAMPLE EXAMPLE P/N PART NO. PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX DESCRIPTION ES3DVHR7G ES3DV H R7 G AEC-Q101 qualified Green compound |
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