ES15GLW datasheet(2/8 Pages) TSC

2 / 8 page

ES15DLW - ES15JLW

Taiwan Semiconductor

Version:A1707

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-lead thermal resistance per diode

RӨJL

°C/W

Junction-to-ambient thermal resistance per diode

RӨJA

°C/W

Junction-to-case thermal resistance per diode

RӨJC

°C/W

Thermal Performance Note: Units mounted on recommended PCB (5mm x 5mm Cu pad test board)

ELECTRICAL SPECIFICATIONS (T

A = 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

TYP

MAX

UNIT

Forward voltage per diode

(1)

ES15DLW

IF = 0.75A, TJ = 25°C

0.80

IF = 1.50A, TJ = 25°C

0.85

0.95

IF = 0.75A, TJ = 125°C

0.66

IF = 1.50A, TJ = 125°C

0.73

0.8

ES15GLW

IF = 0.75A, TJ = 25°C

0.87

IF = 1.50A, TJ = 25°C

0.95

1.3

IF = 0.75A, TJ = 125°C

0.72

IF = 1.50A, TJ = 125°C

0.80

1.05

ES15JLW

IF = 0.75A, TJ = 25°C

1.06

IF = 1.50A, TJ = 25°C

1.18

1.7

IF = 0.75A, TJ = 125°C

0.84

IF = 1.50A, TJ = 125°C

0.97

1.3

Reverse current @ rated VR per diode

(2)

TJ = 25°C

µA

TJ = 125°C

150

µA

Junction capacitance

ES15DLW

1 MHz, VR=4.0V

ES15GLW

ES15JLW

Reverse recovery time

IF=0.5A , IR=1.0A

IRR=0.25A

trr

Notes:

1. Pulse test with PW=0.3 ms

2. Pulse test with PW=30 ms

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