F7338 datasheet(2/12 Pages) IRF

2 / 12 page

IRF7338

www.irf.com

Parameter

Min. Typ. Max. Units

Conditions

N-Ch

—

VGS = 0V, ID = 250µA

P-Ch -12

—

VGS = 0V, ID = -250µA

N-Ch

—

0.01

—

Reference to 25°C, ID = 1mA

P-Ch

—

-0.01

—

Reference to 25°C, ID = -1mA

—

— 0.034

VGS = 4.5V, ID = 6.0A

—

— 0.060

VGS = 3.0V, ID = 2.0A

—

— 0.150

VGS = -4.5V, ID = -2.9A

—

— 0.200

VGS = -2.7V, ID = -1.5A

N-Ch 0.6

—

1.5

VDS = VGS, ID = 250µA

P-Ch -0.40

—

-1.0

VDS = VGS, ID = -250µA

N-Ch 9.2

—

VDS = 6.0V, ID = 6.0A

P-Ch 3.5

—

VDS = -6.0V, ID = -1.5A

N-Ch

—

VDS = 9.6V, VGS = 0V

P-Ch

—

-1.0

VDS = -9.6 V, VGS = 0V

N-Ch

—

VDS = 9.6V, VGS = 0V, TJ = 55°C

P-Ch

—

-25

VDS = -9.6V, VGS = 0V, TJ = 55°C

IGSS

Gate-to-Source Forward Leakage

N-Ch

––

—

±100 nA

VGS = ± 12V

P-Ch

—

±100

VGS = ± 8.0V

N-Ch

—

8.6

P-Ch

—

6.6

N-Ch

—

1.9

P-Ch

—

1.3

N-Ch

—

3.9

P-Ch

—

1.6

N-Ch

—

6.0

—

P-Ch

—

9.6

—

N-Ch

—

7.6

—

P-Ch

—

N-Ch

—

P-Ch

—

N-Ch

—

P-Ch

—

N-Ch

—

640

—

P-Ch

—

490

—

N-Ch

—

340

—

P-Ch

—

N-Ch

—

110

—

P-Ch

—

V(BR)DSS

Drain-to-Source Breakdown Voltage

∆V

(BR)DSS/∆TJ

Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

td(on)

Turn-On Delay Time

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V/°C

Ω

µA

N-Channel

ID = 6.0A, VDS = 6.0V, VGS = 4.5V

P-Channel

ID = -2.9A, VDS = -9.6V, VGS = -4.5 V

N-Channel

VDD = 6.0V, ID = 1.0A, RG = 6.0Ω,

VGS = 4.5V

P-Channel

VDD = -6.0V, ID = -2.9A, RG = 6.0Ω

VGS = -4.5V

N-Channel

VGS = 0V, VDS = 9.0V, ƒ = 1.0MHz

P-Channel

VGS = 0V, VDS = -9.0V, ƒ = 1.0KHz

N-Ch

P-Ch

Repetitive rating; pulse width limited by

max. junction temperature.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Notes:

Parameter

Min. Typ. Max. Units

Conditions

N-Ch

—

6.3

P-Ch

—

-3.0

N-Ch

—

P-Ch

—

-13

N-Ch

—

1.3

TJ = 25°C, IS = 1.7A, VGS = 0V

P-Ch

—

-1.2

TJ = 25°C, IS = -2.9A, VGS = 0V

N-Ch

—

P-Ch

—

N-Ch

—

P-Ch

—

Source-Drain Ratings and Characteristics

Continuous Source Current (Body Diode)

ISM

Pulsed Source Current (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

N-Channel

TJ = 25°C, IF = 1.7A, di/dt = 100A/µs

P-Channel

TJ = 25°C, IF = -2.9A, di/dt = -100A/µs

Surface mounted on 1 in square Cu board.

The N-channel MOSFET can withstand 15V VGS max

for up to 24 hours over the life of the device.

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