| 전자부품 데이터시트 검색엔진 |
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STESD07-C 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STESD07-C 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 2 page ![]() STESD07-C Plastic Encapsulate ESD Protection Diodes Elektronische Bauelemente 02-Nov-2017 Rev. C Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise noted.) Parameter Symbol Min. Typ. Max. Unit Working Peak Reverse Voltage VRWM - - 7 V Maximum Reverse Leakage Current @VRWM IR - - 1 µA Breakdown Voltage @IT 2 VBR 7.5 - 8.7 V Test Current IT - - 1 mA Maximum Reverse Peak Pulse Current 3 IPP - - 8 A Clamping Voltage @IPP 3 VC - - 15.1 V Peak Power Dissipation (8X20µs) PPK - 115 - W Max. Capacitance @VR=0 and f=1MHz C - 55 - pF Notes: 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. Surge current waveform per Figure 3. CHARACTERISTICS CURVES |
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