SSF3608-C datasheet(2/5 Pages) SECOS

2 / 5 page

Elektronische Bauelemente

SSF3608-C

-1.4A, -20V, RDS(O ) 300mΩ

Ω

P-Channel Enhancement Mode Power MOSFET

10-Dec-2018 Rev. A

Page 2 of 5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

J=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-20

VGS=0, ID= -250µA

Gate-Threshold Voltage

VGS(th)

-0.3

-1

VDS=VGS, ID= -1mA

Gate-Source Leakage Current

IGSS

±100

VGS= ±8V

Drain-Source Leakage Current

IDSS

-1

µA

VDS= -20V, VGS=0

300

VGS= -4.5V, ID= -1.4A

390

VGS= -2.5V, ID= -1.2A

Static Drain-Source On-Resistance

RDS(ON)

700

VGS= -1.8V, ID= -0.9A

Total Gate Charge

Gate-Source Charge

Qgs

0.36

Gate-Drain (“Miller”) Charge

Qgd

0.58

IDS= -0.7A

VDS= -10V

VGS= -4.5V

Turn-on Delay Time

Td(on)

8.7

Rise Time

61.2

Turn-off Delay Time

Td(off)

9.8

Fall Time

38.8

VDD= -15V

IDS= -1A

VGS= -4.5V

RGEN=5

Input Capacitance

Ciss

122

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS= -15V

VGS=0

f=1MHz

Source-Drain Diode

Diode Forward Voltage

VSD

-1.2

IS= -500mA, VGS=0

Notes:

Pulse width

≦10µs, duty cycle≦1%.

The data tested by surface mounted on a 1 inch

2 FR4 board with 2OZ copper.

Surface mounted on FR4 board.

The data tested by pulsed, pulse width

≦300µs, duty cycle≦2%.

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