| 전자부품 데이터시트 검색엔진 |
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2SC5855 데이터시트(PDF) 3 Page - Toshiba Semiconductor |
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2SC5855 데이터시트(HTML) 3 Page - Toshiba Semiconductor |
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3 / 5 page ![]() 2SC5855 2004-5-18 3 Base current IC (A) VCE – IB 2.4 0 0.4 0.8 1.2 2.0 1.6 7 5 6 Ic = 8 A Common emitter Tc = 100℃ 0 8 6 2 4 10 Base current IB (A) VCE – IB 0 8 6 2 4 10 6 Ic = 8 A 5 Common emitter Tc = −25℃ 7 2.4 0 0.4 0.8 1.2 2.0 1.6 Collector current IC (A) VCE (sat) – IC 100 1 10 0.1 0.01 10 1 Common emitter Tc = 25℃ 8 6 10 IC/IB = 4 Collector current IC (A) VCE (sat) – IC 10 0.1 0.01 1 100 1 10 Common emitter Tc = 100℃ 8 6 10 IC/IB = 4 0.01 1 0.1 10 VCE(sat) – IC Collector current IC (A) 1 10 100 8 6 10 IC/IB = 4 Common emitter Tc = −25℃ Base current IB (A) VCE – IB 7 5 6 Ic = 8 A 0 8 6 2 4 10 2.4 0 0.4 0.8 1.2 2.0 1.6 Common emitter Tc = 25℃ |
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