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M36LLR8760T 데이터시트(PDF) 9 Page - STMicroelectronics |
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M36LLR8760T 데이터시트(HTML) 9 Page - STMicroelectronics |
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9 / 19 page ![]() 9/19 M36LLR8760T1, M36LLR8760D1, M36LLR8760M1, M36LLR8760B1 FUNCTIONAL DESCRIPTION The PSRAM and Flash memory components have separate power supplies but share the same grounds. They are distinguished by three Chip En- able inputs: EF1 and EF2 for Flash 1 and Flash 2, respectively, and EP for the PSRAM. Recommended operating conditions do not allow more than one device to be active at a time. The most common example is simultaneous read oper- ations on one of the Flash memories and the PSRAM which would result in a data bus conten- tion. Therefore it is recommended to put the other devices in the high impedance state when reading the selected device. Figure 4. Functional Block Diagram AI10909b EP CRP GP WP DQ0-DQ15 VPPF A0-A21 A23 64 Mbit PSRAM UBP LBP WAIT K VDDQF VSS Flash 2 128 Mbit Flash Memory VDDF2 VCCP L RPF WPF WF Flash 1 256 Mbit Flash Memory VDDF1 EF1 GF1 EF2 GF2 A22 |
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