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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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UT3232L-R16-R 데이터시트(PDF) 5 Page - Unisonic Technologies |
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UT3232L-R16-R 데이터시트(HTML) 5 Page - Unisonic Technologies |
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5 / 7 page  UT3232 CMOS IC UNISONICTECHNOLOGIESCO.,LTD 5 of 7 www.unisonic.com.tw QW-R502-A68.G ELECTRICAL CHARACTERISTICS [(over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Note 3 & Table 1)] PARAMETER SYMBOL TEST CONDITIONS MIN TYP (Note 1) MAX UNIT Supply Current ICC No load 0.3 1.0 mA DRIVER SECTION High-Level Output Voltage VOH DOUT at RL=3kΩ to GND, DIN=GND +5.0 +5.4 V Low-Level Output Voltage VOL DOUT at RL=3kΩ to GND, DIN=VCC -5.0 -5.4 V High-Level Input Current IOH VI=VCC ±0.01 ±1 μA Low-Level Input Current IOL VI at GND ±0.01 ±1 μA VCC=3.6V, VOUT=0V ±35 ±60 mA Short-Circuit Output Current (Note 2) IOS VCC=5.5V, VOUT=0V ±35 ±60 mA Output Resistance rO VCC, V+ and V- =0V, VOUT=±2.0V 300 10M Ω RECEIVER SECTION High-Level Output Voltage VOH IOH=-1.0mA VCC-0.6V VCC- 0.1V V Low-Level Output Voltage VOL IOL=1.6mA 0.4 V VCC=3.3V 1.5 2.4 V Positive-Going Input Threshold Voltage VIT+ VCC=5.0V 1.8 2.4 V VCC=3.3V 0.6 1.2 V Negative-Going Input Threshold Voltage VIT- VCC=5.0V 0.8 1.5 V Input Hysteresis VHYS VIT+~VIT- 0.3 V Input Resistance RI VI=±3.0V~±25V 3 5 7 kΩ Notes: 1. All typical values are at VCC=3.3V or VCC=5.0V, and TA=25°C. 2. Short-circuit durations should be controlled to prevent exceeding the device absolute power-dissipation ratings, and not more than one output should be shorted at a time. 3. Test conditions are C1~C4=0.1μF at VCC=3.3V±0.3V; C1=0.047μF, C2~C4=0.33μF at VCC=5.0V±0.5V. 4. Pulse skew is defined as |tPLH−tPHL| of each channel of the same device. SWITCHING CHARACTERISTICS [over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Note 3 and Table 1)] PARAMETER SYMBOL TEST CONDITIONS MIN TYP (Note 1) MAX UNIT DRIVER SECTION Maximum Data Rate CL=1000pF, RL=3kΩ, One Driver Switching 250 Kbit/s Pulse Skew (Note 4) tSK(p) CL=220pF~2500pF, RL =3kΩ~7kΩ 300 ns CL=220pF~1000pF 5 35 Slew Rate, Transition Region SR(tr) RL =3kΩ~7kΩ, VCC=3.3V CL=220pF~2500pF 3 35 V/μs RECEIVER SECTION Propagation Delay Time, Low- to High-Level Output tPLH CL=150pF 300 ns Propagation Delay Time, High- to Low-Level Output tPHL CL=150pF 300 ns Output Enable Time tEN CL=150pF, RL=3kΩ 200 ns Output Disable Time tDIS CL=150pF, RL=3kΩ 200 ns Pulse Skew (Note 4) tSK(P) |tPLH−tPHL| 300 ns Notes: 1. All typical values are at VCC=3.3V or VCC=5.0V, and TA=25°C. 2. Short-circuit durations should be controlled to prevent exceeding the device absolute power-dissipation ratings, and not more than one output should be shorted at a time. 3. Test conditions are C1~C4=0.1μF at VCC=3.3V±0.3V; C1=0.047μF, C2~C4=0.33μF at VCC=5.0V±0.5V. 4. Pulse skew is defined as |tPLH−tPHL| of each channel of the same device. |
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