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AL1673 데이터시트(PDF) 4 Page - Diodes Incorporated |
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AL1673 데이터시트(HTML) 4 Page - Diodes Incorporated |
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4 / 15 page ![]() AL1673 Document number: DS39540 Rev. 1 - 2 4 of 15 www.diodes.com April 2017 © Diodes Incorporated AL1673 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) (Note 4) Symbol Parameter Rating Unit VCC Power Supply Voltage -0.3 to 30 V VCS Voltage at CS to GND -0.3 to 7 V VFB FB Input -0.3 to 7 V VCOMP Loop Compensation Pin -0.3 to 7 V VDRAIN Drain Voltage of Internal MOS 600 V IDS Continuous Drain Current TC = +25°C 2 A VAPWM Voltage at APWM to GND -0.3 to 7 V TJ Operating Junction Temperature -40 to +150 °C TSTG Storage Temperature -65 to +150 °C TLEAD Lead Temperature (Soldering, 10 sec) +300 °C PD Power Dissipation at TA=+50°C (Note 5) 1.53 W θJA Thermal Resistance Junction-to-Ambient (Note 5) 65 °C/W θJC Thermal Resistance (Junction to Case) (Note 5) 22.4 °C/W - ESD (Human Body Model) 2000 V ESD (Machine Model) 200 V Note: 4. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. All voltages unless otherwise stated and measured with respect to GND. 5. Device mounted on 2"x2" FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Parameter Min Max Unit TA Ambient Temperature (Note 6) -40 +105 °C Note: 6. The device may operate normally at +125 °C ambient temperature under the condition not trigger temperature protection. |
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