4PT06AI-03 datasheet(4/7 Pages) NELLSEMI

4 / 7 page

I ,I ,I [T ] / I ,I ,I [T =25°C]

GT H L J

-40

-20

100 120 140

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Fig.5 Relative variation of gate trigger current

and holding current versus junction

temperature

Fig.6 Relative variation of holding current

versus gate-cathode resistance

(typical values)

1E-2

1E-1

1E+0

1E+1

I [R ] / I [R =1KΩ]

Fig.3 Average and DC on-state current versus

ambient temperature (DPAK)

Fig.4 Relative variation of thermal impedance

junction to ambient versus pulse duration

(DPAK)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

100

125

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2 5E+2

1E-3

1E-2

1E-1

1E+0

I (AV)(A)

K=[Z

)/R

]

th(j-c

th(j-c)

Zth(j-a)

Zth(j-c)

t (s)

Device mounted on FR4 with

recommended pad layout

α=180°

DPAK (S = 0.5cm²)

IPAK

α=180°

(°C)

amb

Device mounted on FR4 with

recommended pad layout

IGT

T (°C)

hand

R =1KΩ

T =25°C

R (KΩ)

Fig.1 Maximum average power dissipation versus

on-state current

Fig.2 Average and DC on-state current versus

case temperature

(W)

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

100

125

(A)

T(AV)

0.5

0.0

360°

α=180°

(A)

T(AV)

α=180°

TO-220AB

Insulated

(°C)

case

TO-251-4R/TO-252-4R

TO-220AB

TO-126

TO-202-3

Page 4 of 7

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