| 전자부품 데이터시트 검색엔진 |
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ACS2T10S 데이터시트(PDF) 4 Page - Nell Semiconductor Co., Ltd |
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ACS2T10S 데이터시트(HTML) 4 Page - Nell Semiconductor Co., Ltd |
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4 / 7 page ![]() Fig.2 RMS on-state current vs. case temperature Fig.1 Maximum power dissipation vs. RMS on-state current 3 2 1 0 0 0.5 1 1.5 2 2.5 Fig.3 On-state characteristics (maximum values) 3 2 1 0 0 25 50 Fig.4 Surge peak on-state current vs. number of cycles. 0 5 10 15 20 1 10 100 1000 Number of cycles Fig.5 Relative variation of gate trigger current versus junction temperature (typical values). Fig.6 Relative variation of holding current and latching current versus junction temperature (typical values). l [T ] / l [T = 25°C] GT J GT J 3.0 2.5 2.0 1.5 1.0 0.5 0.0 140 120 100 80 60 40 20 0 -20 -40 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 120 140 l l [T ] / l l [T = 25°C] H, L J H, L J ACS2T Series RoHS RoHS l (A) T(RMS) 75 100 125 α=180° TO-251-4R/TO-252-4R/ SOT-223 TO-220F(lns) TO-92 3 2 1 4 0 0.5 1.0 1.5 2.0 2.5 0 P(W) IT(RMS)(A) lTM(A) T =25°C J T =125°C J VTM(V) t=20mS Full cycle T (°C) J lGT3 l &l GT1 GT2 lH lL www.nellsemi.com Page 4 of 7 T (ºC) C |
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