VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7710

Photodetector/Transimpedance Amplifier

Family for Optical Communication

Page 2

G52139-0, Rev 2.2

04/02/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

Table 1: Electro-Optic Specifications

Symbol

Parameter

Min

Typ

Max

Units

Conditions

Supply Voltage

4.5

5.5

V

λ

Wavelength

1270

1355

nm

Low Frequency Cutoff

1.4

MHz

-3dB

Rise/Fall Time

300

ps

20% to 80%

P = -3 dBm

S

Sensitivity

-28

dBm

Dynamic Range

25

dB

Single Ended Output Impedance

25

90

¾

Differential Output Voltage

0.25

1.2

V

P = -3 dBm, R = 100

Ω

PSRR

Power Supply Rejection Ratio

35

dB

f = 0.3MHz - 40MHz

Hybrid Differential

Supply Current

62

mA

P = -28 to -3 dBm

BW

Optical Modulation Bandwidth

700

1300

MHz

-3dB

Rd

Differential Responsivity

2.5

mV/µW

Output Noise Voltage

1.2

BW = 1500MHz, P = 0mW

Input Noise Equivalent Optical Power

0.22

µW RMS

BW = 1500MHz, P = 0mW

PDJ

Pattern Dependent Jitter

60

ps

P = -3dBm

±10% Voltage Window

DCD

Duty Cycle Distortion

5

%

P = -3dBm

ýV

Bias Offset Voltage

200

mV

P = -3dBm