| 전자부품 데이터시트 검색엔진 |
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MTP20008 데이터시트(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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MTP20008 데이터시트(HTML) 2 Page - Nell Semiconductor Co., Ltd |
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2 / 3 page ![]() RoHS RoHS Nell High Power Products MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted) A PARAMETER V V SYMBOL MTP200 UNIT 1900 08 900 1100 1300 1800 800 1000 1200 1600 18 12 10 16 1700 1800 800 1000 1200 1600 V Maximum repetitive peak reverse voltage Peak reverse non-repetitive voltage Maximum DC blocking voltage Maximum average forward rectified output current Peak forward surge current single sine-wave superimposed on rated load Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing RMS isolation voltage from case to leads Operating junction storage temperature range VRRM VRSM IFSM VDC IF(AV) VISO 2 I t 2500 22100 200 -40 to 150 2100 2 A s A A V ºC ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A PARAMETER V µ A SYMBOL MTP200 UNIT 08 18 12 10 16 Maximum instantaneous forward drop per diode Maximum reverse DC current at rated DC blocking VF IR 15 1.35 20 voltage per diod TEST CONDITIONS I = 200A F T = 25°C A T = 150°C A THERMAL AND MECHANICAC (T = 25°C unless otherwise noted) A PARAMETER ° C/W SYMBOL MTP200 UNIT 08 18 12 10 16 Typical thermal resistance (1) With heatsink, single side heat dissipation, half sine wave. (1) RθJC 0.10 (2) M5 screw. Notes Storage temperature range TSTG -40 to 125 ºC TJ TEST CONDITIONS junction to case Single-side heat dissipation, sine half wave Mounting ± 10 % to heatsink M5 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. 4 Nm to terminal M5 4 Approximate weight 320 torque g - Module type: ”MTP” for 3Ø Brıdge 1 2 3 - RRM Device code - Voltage code:code x 100 = V I rating:"200" for 200 A F(AV) mA MTP200 2 MTP 200 16 3 1 www.nellsemi.com Page 2 of 3 |
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