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150FDR10 데이터시트(PDF) 2 Page - Nell Semiconductor Co., Ltd

부품명 150FDR10
상세설명  Fast Recovery Diodes
PDF  6 Pages
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제조업체  NELLSEMI [Nell Semiconductor Co., Ltd]
홈페이지  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

150FDR10 데이터시트(HTML) 2 Page - Nell Semiconductor Co., Ltd

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SEMICONDUCTOR
Nell High Power Products
Maximum junction operating and
storage temperature range
- 40 to175
ºC
0.1
K/W
Maximum thermal resistace,
junction to case
Maximum thermal resistance
case to heatsink
0.3
Nm
Maximum
(+0% , -20%)
allowable mounting torque
TJ, Tstg
RthJC
RthCS
Mounting surface, smooth, flat and greased
DC operation
FORWARD CONDUCTION
PARAMETER
SYMBOL
UNIT
TEST CONDITIONS
Not lubricated threads
Lubricated threads
17
14.5
150FD(R)
RoHS
RoHS
FORWARD CONDUCTION
PARAMETER
SYMBOL
UNIT
TEST CONDITIONS
150D(R)
Maximum average forward current
at maximum case temperature
IF(AV)
180° conduction, half sine wave
A
125
ºC
Maximum peak, one cycle forward,
non-reptitive surge current
IFSM
t = 10ms
t = 8.3ms
t = 10ms
t
= 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
2
I t
3000
3141
2519
2635
45
40.9
31.7
28.8
2
kA s
A
450
t = 0.1 ms to 10 ms, no voltage reapplied
Maximum l²t for fusing
Maximum l²√t for fusing
2
kA √s
Maximum forward voltage drop
T =
J
T Maximum
J
0.95
V
1.05
150
VFM
l
= 470A, T
pk
= 25°C
J
1.65
V
Maximum value of threshold voltage
VF(TO)
rF
Maximum value of forward slope resistance
mΩ
2
I √t
No voltage
reapplied
100%VRRM
reapplied
No voltage
reapplied
100%VRRM
reapplied
Sinusoidal half wave,
initial T = T maximum
J
J
Case style
(JEDEC) see dimensions -
link at the end of datasheet
Approximate weight
Ceramic housing
Glass-metal seal
100
95
g
DO-205AA (DO-8)
Maximum RMS forward current
IF(RMS)
DC at 110°C
A
235.5
,
t = 10ms sinusoidal wave
p
150FD(R)Series
SWITCHING
250
PARAMETER
SYMBOL
UNIT
TEST CONDITIONS
trr
290
08 to 12
150FD(R)
120
ns
85
500
Typical reverse recovery time
T = 25°C,
,
J
I = 1A to V = 30V
F
R
-dl /dt = 100 A/µs
F
nC
250
Qrr
340
04 to 06
1300
Typical reverse recovered charge
T = 25°C, I = 1A to V = 30V,
J
F
R
-dl /dt = 100 A/µs
F
T = 25°C, -dl /dt = 25 A/µs,
J
F
l
=
π x rated l
FM
F(AV)
T = 25°C, -dl /dt = 25 A/µs,
J
F
l
=
x rated l
FM
F(AV)
π
60
500
T = 25°C,
J
I = 0.5A, I = 1.0A,
F
R
I
= 250mA (RG#1 CKT)
RR
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