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Document No. D14902EJ2V1DS00 (2nd edition)

Date Published August 2004 NS CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SC2334

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

2002

The 2SC2334 is a mold power transistor developed for high-speed

switching, and is ideal for use as a driver in devices such as switching

regulators, DC/DC converters, and high-frequency power amplifiers.

FEATURES

• Low collector saturation voltage

• Fast switching speed

• Complementary transistor: 2SA1010

°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

150

V

Collector to emitter voltage

100

V

Emitter to base voltage

7.0

V

Collector current (DC)

7.0

A

Collector current (pulse)

PW

≤ 300

duty cycle

≤ 10%

15

A

Base current (DC)

3.5

A

°C

40

W

Total power dissipation

°C

1.5

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

ORDERING INFORMATION

Part No.

Package

2SC2334

TO-220AB

(TO-220AB)