| 전자부품 데이터시트 검색엔진 |
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NLSX0102FCT2G 데이터시트(PDF) 2 Page - ON Semiconductor |
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NLSX0102FCT2G 데이터시트(HTML) 2 Page - ON Semiconductor |
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2 / 10 page ![]() NLSX0102 www.onsemi.com 2 Figure 1. Block Diagram (1 I/O Line) PU1 RPullup 10 k W VL I/O VL I/O VCC VCC One−Shot Block One−Shot Block PU2 Gate Bias N RPullup 10 k W EN EN PIN ASSIGNMENT Pins Description VCC VCC Supply Voltage VL VL Supply Voltage GND Ground EN Output Enable, referenced to VL I/O VCCn I/O Port, referenced to VCC I/O VLn I/O Port, referenced to VL FUNCTION TABLE EN Operating Mode L Hi−Z H I/O Buses Connected MAXIMUM RATINGS Symbol Parameter Value Condition Unit VCC High−side DC Supply Voltage −0.5 to +7.0 V VL Low−side DC Supply Voltage −0.5 to +7.0 V I/O VCC VCC−referenced DC Input / Output Voltage −0.5 to +7.0 V I/O VL VL−referenced DC Input / Output Voltage −0.5 to +7.0 V VEN Enable Control Pin DC Input Voltage −0.5 to +7.0 V II/O_SC Short−Circuit Duration (I/O VL and I/O VCC to GND) ±50 Continuous mA II/OK Input / Output Clamping Current (I/O VL and I/O VCC) −50 VI/O < 0 mA TSTG Storage Temperature −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. |
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