2SC5993 datasheet(1/3 Pages) PANASONIC

부품명	2SC5993

상세설명	For power amplification For TV VM circuit

PDF	3 Pages

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제조업체	PANASONIC [Panasonic Semiconductor]

홈페이지	http://www.panasonic.com/industrial/

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Power Transistors

1

Publication date: July 2004

SJD00320AED

2SC5993

Silicon NPN epitaxial planar type

For power amplification

For TV VM circuit

■ Features

• Satisfactory linearity of forward current transfer ratio h

FE

• High transition frequency (f

T)

• Full-pack package which can be installed to the heat sink with one

screw.

■ Absolute Maximum Ratings T

C

= 25°C

■ Electrical Characteristics T

C = 25°C ± 3°C

1.4±0.2

1.6±0.2

0.8±0.1

0.55±0.15

2.54±0.30

5.08±0.50

12

3

2.6±0.1

2.9±0.2

4.6±0.2

φ 3.2±0.1

9.9±0.3

Unit: mm

1: Base

2: Collector

3: Emitter

TO-220D-A1 Package

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

180

V

Collector-emitter voltage (Base open)

VCEO

180

V

Emitter-base voltage (Collector open)

VEBO

6V

Collector current

IC

1.5

A

Peak collector current

ICP

3A

Collector power dissipation

PC

20

W

Ta = 25°C

2.0

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

VCEO

IC = 10 mA, IB = 0

180

V

Collector-base cutoff current (Emitter open)

ICBO

VCB

= 180 V, I

E

= 0

100

µA

Emitter-base cutoff current (Collector open)

IEBO

VEB = 6 V, IC = 0

100

µA

Forward current transfer ratio *

hFE

VCE = 5 V, IC = 0.1 A

60

240



Collector-emitter saturation voltage

VCE(sat)

IC

= 1 A, I

B

= 0.1 A

0.5

V

Transition frequency

fT

VCE = 10 V, IC = 0.2 A, f = 10 MHz

130

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

10

pF

(Common base, input open circuited)

Turn-on time

ton

IC = 0.4 A, Resistance loaded

0.1

µs

Storage time

tstg

IB1

= 0.04 A, I

B2

= − 0.04 A

1.5

µs

Fall time

tf

VCC = 100 V

0.1

µs

Rank

Q

P

hFE

60 to 140

120 to 240

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Internal Connection

B

C

E

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