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STM32F030R8 데이터시트(PDF) 57 Page - STMicroelectronics |
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STM32F030R8 데이터시트(HTML) 57 Page - STMicroelectronics |
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57 / 93 page ![]() DS9773 Rev 4 57/93 STM32F030x4/x6/x8/xC Electrical characteristics 75 6.3.9 PLL characteristics The parameters given in Table 38 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. 6.3.10 Memory characteristics Flash memory The characteristics are given at TA = -40 to 85 °C unless otherwise specified. tsu(LSI)(2) LSI oscillator startup time - - 85 µs IDDA(LSI)(2) LSI oscillator power consumption - 0.75 - µA 1. VDDA = 3.3 V, TA = -40 to 85 °C unless otherwise specified. 2. Guaranteed by design, not tested in production. Table 37. LSI oscillator characteristics(1) Symbol Parameter Min Typ Max Unit Table 38. PLL characteristics Symbol Parameter Value Unit Min Typ Max fPLL_IN PLL input clock(1) 1. Take care to use the appropriate multiplier factors to obtain PLL input clock values compatible with the range defined by fPLL_OUT. 1(2) 8.0 24(2) MHz PLL input clock duty cycle 40(2) -60(2) % fPLL_OUT PLL multiplier output clock 16(2) -48 MHz tLOCK PLL lock time - - 200(2) 2. Guaranteed by design, not tested in production. µs JitterPLL Cycle-to-cycle jitter - - 300(2) ps Table 39. Flash memory characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design, not tested in production. Unit tprog 16-bit programming time TA = -40 to +85 °C - 53.5 - µs tERASE Page erase time(2) 2. Page size is 1KB for STM32F030x4/6/8 devices and 2KB for STM32F030xC devices TA = -40 to +85 °C - 30 - ms tME Mass erase time TA = -40 to +85 °C - 30 - ms IDD Supply current Write mode - - 10 mA Erase mode - - 12 mA Vprog Programming voltage - 2.4 - 3.6 V |
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