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STM32F030R8 데이터시트(PDF) 57 Page - STMicroelectronics

부품명 STM32F030R8
상세설명  Value-line Arm®-based 32-bit MCU with up to 256 KB Flash, timers, ADC, communication interfaces, 2.4-3.6 V operation
PDF  93 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32F030R8 데이터시트(HTML) 57 Page - STMicroelectronics

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DS9773 Rev 4
57/93
STM32F030x4/x6/x8/xC
Electrical characteristics
75
6.3.9
PLL characteristics
The parameters given in Table 38 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions.
6.3.10
Memory characteristics
Flash memory
The characteristics are given at TA = -40 to 85 °C unless otherwise specified.
tsu(LSI)(2)
LSI oscillator startup time
-
-
85
µs
IDDA(LSI)(2) LSI oscillator power consumption
-
0.75
-
µA
1. VDDA = 3.3 V, TA = -40 to 85 °C unless otherwise specified.
2. Guaranteed by design, not tested in production.
Table 37. LSI oscillator characteristics(1)
Symbol
Parameter
Min
Typ
Max
Unit
Table 38. PLL characteristics
Symbol
Parameter
Value
Unit
Min
Typ
Max
fPLL_IN
PLL input clock(1)
1. Take care to use the appropriate multiplier factors to obtain PLL input clock values compatible with the
range defined by fPLL_OUT.
1(2)
8.0
24(2)
MHz
PLL input clock duty cycle
40(2)
-60(2)
%
fPLL_OUT
PLL multiplier output clock
16(2)
-48
MHz
tLOCK
PLL lock time
-
-
200(2)
2. Guaranteed by design, not tested in production.
µs
JitterPLL
Cycle-to-cycle jitter
-
-
300(2)
ps
Table 39. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Guaranteed by design, not tested in production.
Unit
tprog
16-bit programming time TA = -40 to +85 °C
-
53.5
-
µs
tERASE Page erase time(2)
2. Page size is 1KB for STM32F030x4/6/8 devices and 2KB for STM32F030xC devices
TA = -40 to +85 °C
-
30
-
ms
tME
Mass erase time
TA = -40 to +85 °C
-
30
-
ms
IDD
Supply current
Write mode
-
-
10
mA
Erase mode
-
-
12
mA
Vprog
Programming voltage
-
2.4
-
3.6
V



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