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ISC4B35D 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 ISC4B35D
상세설명  isc Triacs
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1
isc Triacs
ISC4B35D
FEATURES
·
With TO-252 package
·
Glass passivated triacs in a plastic envelope, for use in
Applications requiring high bidirectional transient and
blocking voltage capability and high thermal cycling
performance.Typical applications include motor control,
industrial and domestic lighting,heating and static
switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
800
V
VRRM
Repetitive peak off-state voltage
800
V
IT(RMS)
RMS on-state current (full sine wave)
16
A
ITSM
Non-repetitive peak on-state current
tp=20ms
160
A
PGM
Peak gate power dissipation
4
W
PG(AV)
Average gate power dissipation
0.4
W
Tj
Operating junction temperature
110
℃
Tstg
Storage temperature
-40~150
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
IRRM
Repetitive peak reverse current
VR=VRRM,
VR=VRRM, Tj=125℃
0.02
0.5
mA
IDRM
Repetitive peak off-state current
VD=VDRM,
VD=VDRM, Tj=125℃
0.02
0.5
mA
IGT
Gate trigger current
Ⅰ
VD=12V; IT= 0.1A
35
mA
Ⅱ
35
Ⅲ
35
Ⅳ
70
VTM
On-state voltage
IT= 20A
1.6
V
IH
Holding current
IGT= 0.1A, VD= 12V
30
mA
VGT
Gate trigger voltage
VD=12V; IT= 0.1A
1.5
V
DPAK


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