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FIR6N90FG 데이터시트(PDF) 1 Page - Shenzhen Foster Semiconductor Co., Ltd. |
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FIR6N90FG 데이터시트(HTML) 1 Page - Shenzhen Foster Semiconductor Co., Ltd. |
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1 / 8 page ![]() 900V N-Channel MOSFET-T Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage 900 V ID Drain Current Tj=25℃ 6.0 A Tj=100℃ 3.9 VGS(TH) Gate Threshold Voltage ±30 V EAS Single Pulse Avalanche Energy (note1) 300 mJ IAR Avalanche Current (note2) 6.0 A PD Power Dissipation (Tj=25℃) 56 W Tj Junction Temperature(Max) 150 ℃ Tstg Storage Temperature -55~+150 ℃ TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds 300 ℃ Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJC Thermal Resistance,Junction to Case - 2.23 ℃/W RθJA Thermal Resistance,Junction to Ambient - 120 ℃/W Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg=30nC (Typ.). □ BVDSS=900V,I D=6A □ R DS(on) : 2.1Ω (Max) @VG=10V □ 100% Avalanche Tested FIR6N90FG @ 2018 Copyright By American First Semiconductor REV:1.0 Page 1/8 YAWW G D S S G D Marking Diagram A = Assembly Location Y = Year WW = Work Week = Specific Device Code FIR6N90F PIN Connection TO-220F FIR6N90F g Schematic dia ram |
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