SM7312DHKP

Copyright © Sinopower Semiconductor Inc.

Rev. A.1 - January, 2019

www.sinopowersemi.com

3

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Unit

Static Characteristics

40

-

-

V

Zero Gate Voltage Drain Current

-

-

1

m

A

-

-

30

1.4

1.8

2.5

V

Gate Leakage Current

-

-

±100

nA

-

5.4

6.8

mW

-

8.9

-

-

7

9.5

Gfs

Forward Transconductance

-

26

-

S

Diode Characteristics

Diode Forward Voltage

-

0.75

1.1

V

Reverse Recovery Time

-

23

-

ns

Charge Time

-

13

-

Discharge Time

-

10

-

Reverse Recovery Charge

-

13

-

nC

Gate Resistance

-

1

2

W

Input Capacitance

Frequency=1.0MHz

-

1370 1781

pF

Output Capacitance

-

317

-

Reverse Transfer Capacitance

-

46

-

Turn-on Delay Time

-

13.8

25

ns

Turn-on Rise Time

-

8

15

Turn-off Delay Time

-

30

54

Turn-off Fall Time

-

21

38

Total Gate Charge

-

22

-

nC

Threshold Gate Charge

-

2.6

-

Gate-Source Charge

-

4.7

-

Gate-Drain Charge

-

3

-

Note e：Pulse test ; pulse width≤300ms, duty cycle≤2%.

Note f：Guaranteed by design, not subject to production testing.