SM7321ESKP

www.sinopowersemi.com

4

Copyright ã Sinopower Semiconductor, Inc.

Rev. A.5 - March, 2018

®

Symbol

Parameter

Test Conditions

Channel 2

Unit

Min.

Typ.

Max.

Static Characteristics

Drain-Source Breakdown Voltage

30

-

-

V

Zero Gate Voltage Drain Current

-

-

1

mA

-

-

30

mA

Gate Threshold Voltage

1.3

1.7

2.5

V

Gate Leakage Current

-

-

±100

nA

d

Drain-Source On-state Resistance

-

2.4

2.9

m

W

-

3.5

-

-

3

3.75

Gfs

Forward Transconductance

-

43

-

S

Diode Characteristics

d

Diode Forward Voltage

-

0.8

1.1

V

Reverse Recovery Time

-

46.7

-

ns

Charge Time

-

24.8

-

Discharge Time

-

22

-

Reverse Recovery Charge

-

31.2

-

nC

Dynamic Characteristics

e

Gate Resistance

-

1

2

W

Input Capacitance

Frequency=1.0MHz

-

2775

3608

pF

Output Capacitance

-

1595

-

Reverse Transfer Capacitance

-

105

-

Turn-on Delay Time

-

17

31

ns

Turn-on Rise Time

-

10.5

19

Turn-off Delay Time

-

37.6

68

Turn-off Fall Time

-

35.8

65

Gate Charge Characteristics

e

Total Gate Charge

-

18.6

-

nC

Total Gate Charge

-

40.7

57

Threshold Gate Charge

-

4.2

-

Gate-Source Charge

-

8.4

-

Gate-Drain Charge

-

4.8

-

Note d：Pulse test; pulse width

£300ms, duty cycle£2%.

Note e：Guaranteed by design, not subject to production testing.