SM7341EHKP

www.sinopowersemi.com

2

Copyright ã Sinopower Semiconductor, Inc.

Rev. A.4 - December, 2017

®

Symbol

Parameter

Channel 1 Channel 2

Unit

Common Ratings

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Maximum Junction Temperature

150

°C

Storage Temperature Range

-55 to 150

°C

Diode Continuous Forward Current

15

30

A

Continuous Drain Current

73

186

A

46

118

a

Pulse Drain Current

100

200

A

Maximum Power Dissipation

31

62.5

W

12.5

25

Thermal Resistance-Junction to Case

Steady State

4

2

°C/W

b

Continuous Drain Current

24

44

A

19

35

Pulse Drain Current(T=300uS)

60

110

A

b

Maximum Power Dissipation

3.6

3.6

W

2.3

2.3

b,c

Thermal Resistance-Junction to Ambient

t

£10s

35

35

°C/W

Steady State

75

75

d

Thermal Resistance-Junction to Ambient

Steady State

120

120

°C/W

e

Avalanche Current, Single pulse

L=0.1mH

24

50

A

e

Avalanche Energy, Single pulse

L=0.1mH

28

125

mJ

Note a：Pulse width is limited by max. junction temperature.

Note b：t

Note c：Steady time = 999s and surface mounted on FR-4 board using 1in

Note d：Steady time = 999s and surface mounted on FR-4 board and the minimum pad size of PCB.

Note e：UIS tested and pulse width are limited by maximum junction temperature 150