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PRM010N04CTF 데이터시트(PDF) 1 Page - PFC Device Inc. |
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PRM010N04CTF 데이터시트(HTML) 1 Page - PFC Device Inc. |
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1 / 8 page ![]() s ^ E DK^&d ^ s W& WZD E d& D Characteristics Values Units VDS 40 V ID (TC=25 ) 30 A Max. RDS(ON) 10 mΩ Ω Ω Ω TJ Operating Junction Temperature -55 to +150 oC ' The N-Channel enhancement mode power field effect transistor is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The device is well suited for high efficiency fast switching applications. d Charger Adapter Power Tools LED Lighting & Max. RDS(ON)=10m @VGS=10V Improved dv/dt capability Fast switching Green Device Available WZD E d& /dK ' ^ |
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