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1069007 데이터시트(PDF) 2 Page - TriQuint Semiconductor

부품명 1069007
상세설명  Edge QAM Gain Stage
PDF  8 Pages
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제조업체  TRIQUINT [TriQuint Semiconductor]
홈페이지  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

1069007 데이터시트(HTML) 2 Page - TriQuint Semiconductor

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TAT7472A1F
CATV 75
Ω pHEMT Dual RF Amplifier
Datasheet: Rev D 06-08-15
- 2 of 9 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
−55 to 150 °C
Device Voltage (VDD)
+8V
Total Device Current (IDD=IDDA+IDDB)
400 mA
Device Current per Amp (IDDA or IDDB)
200 mA
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Recommended Operating Conditions
Parameter
Min
Typ
Max Units
Device Voltage (VDD)
5.0
V
Device Current (IDD)
270
320
370
mA(†)
Case Temperature
−40
+85
°C
Tj for 106 hours MTTF
+150
°C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
− Single Ended in 50 Ohms
Test conditions unless otherwise noted:
VCC = +5 V, Temp = +25 °C, 50 Ω System
Parameter
Conditions
Min
Typ
Max
Units
Operational Frequency Range
50
1200
MHz
Test Frequency
800
MHz
Gain
18
dB
Output IP3
Pout = 5 
dBm/tone, ∆f=10 MHz,
800
 MHz
+40
dBm
Device Current (IDDA or IDDB)
135
163
185
mA
Typical Performance
− Push-Pull Configuration in 75 Ohms
Test conditions unless otherwise noted: VCC = +5 V, Temp.= +25 °C, 75 Ω System.
Parameter
Conditions
Typical Value
Units
Frequency
50
250
450
860
1210
MHz
Gain
15
15
15
15.4
15.4
dB
Input Return Loss
22
25
23
16
15
dB
Output Return Loss
20
22
21
16
13
dB
CTB
+41 dBmV / channel
80 channels + 108 QAM,
Flat Loading.
270
 mA < IDD < 320 mA
−78
−76
−74
-
-
dBc
CSO
−82
−83
−80
-
-
dBc
CCN
68.5
67.5
65
-
-
dBc
Output P1dB
+24.5
+24.5
+24.7
+24.5
23.5
dBm
Output IP3
Pout= +8
 dBm / tone, Δf=10 MHz
+45
+45
+45
+44
+40(2)
dBm
ACPR
62
 dBmV output, 1ch
69
68
67.5
64
58(2)
dBc
Noise Figure
2.2
2.3
2.4
2.5
2.7
dB
Total Device Current, IDD
320
mA
Thermal Resistance, θjb(1) Junction to base
15
°C/W
Notes:
1. The thermal resistance is referenced from the hottest point of the device junction to the ground paddle
2. Improves with higher Vdd
– see performance plots on page 7



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