BC307 datasheet(1/3 Pages) ARTSCHIP

부품명	BC307

상세설명	PNP Epitaxial Silicon Transistor

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BC307/308/309

PNP Epitaxial Silicon Transistor

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Switching and Amplifier Applications

.Low Noise: BC309

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

Ta=25

℃ unless otherwise noted

Symbol

Parameter

Value

Units

VCES

Collector-Emitter Voltage

:BC307

:BC308/309

-50

-30

V

VCEO

Collector-Emitter Voltage

:BC307

:BC308/309

-45

-25

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current (DC)

-100

mA

PC

Collector Power Dissipation

500

mW

TJ

Junction Temperature

150

℃

TSTG

Storage Temperature

-55~150

℃

Electrical Characteristics Ta=25

℃ unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVCEO

Collector-Emitter Breakdown Voltage

:BC307

:BC308/309

Ic=-2mA, IB=0

-45

-25

V

BVCES

Collector-Emitter Breakdown Voltage

:BC307

:BC308/309

Ic=-10µA, VBE=0

-50

-30

V

BVEBO

Emitter-Base Breakdown Voltage

IE=-10µA, IC=0

-5

V

ICES

Collector Cut-off Current

:BC307

:BC308/309

VCE=-45V, VBE=0

VCE=-25V,VBE=0

-2

-15

nA

hFE

DC Current Gain

VCE=-5V, IC=-2mA

120

800

VCE(sat)

Collector-Emitter Saturation Voltage

Ic=-10mA, IB=-0.5mA

Ic=-100mA, IB=-5mA

-0.5

-0.3

V

VBE(sat)

Collector-Base Saturation Voltage

Ic=-10mA, IB=-0.5mA

Ic=-100mA, IB=-5mA

-0.7

-0.85

V

VBE(on)

Base-Emitter On Voltage

VCE=-5V, IC=-2mA

-0.55

-0.62

-0.7

V

fT

Current Gain Bandwidth Product

VCE=-5V, Ic=-10mA, f=50MHz

130

MHz

Cob

Output Capacitance

VCB=-10V, IE=0, f=1MHz

6

pF

Cib

Input Capacitance

VEB=-0.5V, IC=0, f=1MHz

12

pF

NF

Noise Figure

:BC307/308

:BC309

VCE=-5V, IC=-0.2mA,

RG=2k

Ω, f=1KHz

VCE=-5V, Ic=-0.2mA

RG=2K

Ω, f=30~15kHz

2

10

4

dB

유사한 부품 번호 - BC307

제조업체	부품명	데이터시트	상세설명
Motorola, Inc	BC307	110Kb / 4P	Amplifier Transistors(PNP)
ON Semiconductor	BC307	84Kb / 4P	Amplifier Transistors(PNP Silicon) 1997 REV 1
NXP Semiconductors	BC307	52Kb / 8P	PNP general purpose transistors 1997 Mar 07
Fairchild Semiconductor	BC307	69Kb / 5P	PNP EPITAXIAL SILICON TRANSISTOR
KEC(Korea Electronics)	BC307	144Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, LOW NOISE AMPLIFIER)

More results

유사한 설명 - BC307

제조업체	부품명	데이터시트	상세설명
Unisonic Technologies	UTC2SA1015	62Kb / 2P	PNP EPITAXIAL SILICON TRANSISTOR
Samsung semiconductor	2N5401	76Kb / 2P	PNP EPITAXIAL SILICON TRANSISTOR
Samsung semiconductor	BCW69	28Kb / 1P	PNP EPITAXIAL SILICON TRANSISTOR
Fairchild Semiconductor	BCX71G	31Kb / 2P	PNP EPITAXIAL SILICON TRANSISTOR
	FJN4303R	36Kb / 4P	PNP Epitaxial Silicon Transistor
	FJNS4202R	36Kb / 4P	PNP Epitaxial Silicon Transistor
	FJNS4204R	65Kb / 4P	PNP Epitaxial Silicon Transistor
	FJNS4210R	32Kb / 4P	PNP Epitaxial Silicon Transistor
	FJNS4212R	26Kb / 3P	PNP Epitaxial Silicon Transistor
	FJV4102R	55Kb / 4P	PNP Epitaxial Silicon Transistor

More results

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유사한 부품 번호 - BC307

유사한 설명 - BC307

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