EMB07P03CS datasheet(1/5 Pages) EXCELLIANCE

부품명	EMB07P03CS

상세설명	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

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제조업체	EXCELLIANCE [Excelliance MOS Corp.]

홈페이지	http://www.excelliancemos.com/

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1 / 5 page

2016/7/20

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EMB07P03CS

G

S

D

P‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS ‐30V

RDSON (MAX.)

6.8mΩ

ID ‐80A

UIS, Rg 100% Tested

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate‐Source Voltage

VGS

±25

V

Continuous Drain Current

TC = 25 °C

ID

‐80

A

TC = 100 °C ‐51

Pulsed Drain Current

1

IDM ‐240

Avalanche Current

IAS ‐35

Avalanche Energy

L = 0.1mH, ID=‐35A, RG=25Ω

EAS

61.25

mJ

Power Dissipation

TC = 25 °C

PD

78

W

TC = 100 °C

31

Operating Junction & Storage Temperature Range

Tj, Tstg ‐55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

Junction‐to‐Case

RJC

1.6

°C / W

Junction‐to‐Ambient

3

RJA

62.5

1Pulse width limited by maximum junction temperature.

2Duty cycle  1％

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