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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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DAM50N60C 데이터시트(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM50N60C 데이터시트(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page  N-Channel Enhancement Mode MOSFET Features VDSS = 60V RDS(ON) Typ.17mΩ @ VGS = 10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain Source Voltage VDS 60 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ TC = 25°C ID 50 A @ TC = 100°C 32 Drain Current Pulsed@ TC = 25°C IDM 200 A Single Pulse Avalanche Energy EAS 42 mJ Single Pulse Avalanche Current IAS 29 A Maximum Power Dissipation PD 104 W Storage Temperature Range TSTG -50 to +150 °C Operating Junction Temperature Range TJ -50 to +150 °C Thermal Resistance Junction to Case R θJC 1.2 °C/W DAM50N60C Note3 (Tc=25°C unless otherwise noted) |
유사한 부품 번호 - DAM50N60C |
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유사한 설명 - DAM50N60C |
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