PIC12F635ESLASHPQTP datasheet(165/196 Pages) MICROCHIP

165 / 196 page

Preliminary

DS41232B-page 163

PIC12F635/PIC16F636/639

TABLE 15-2:

PRECISION INTERNAL OSCILLATOR PARAMETERS

FIGURE 15-5:

CLKOUT AND I/O TIMING

Param

No.

Sym

Characteristic

Freq

Tolerance

Min

Typ†

Max

Units

Conditions

F10

FOSC

Internal Calibrated

INTOSC Frequency(1)

HFINTOSC

±1%

—

8.00

TBD

MHz VDD and Temperature (TBD)

±2%

—

8.00

TBD

MHz 2.5V

≤ VDD ≤ 5.5V

°C ≤ TA ≤ +85°C

±5%

—

8.00

TBD

MHz 2.0V

≤ VDD ≤ 5.5V

-40

°C ≤ TA ≤ +85°C (Ind.)

-40

°C ≤ TA ≤ +125°C (Ext.)

F14

TIOSCST Oscillator Wake-up from

Sleep Start-up Time*

——

TBD

μsVDD = 2.0V, -40°C to +85°C

——

TBD

μsVDD = 3.0V, -40°C to +85°C

——

TBD

μsVDD = 5.0V, -40°C to +85°C

Legend: TBD = To Be Determined

These parameters are characterized but not tested.

† Data in ‘Typ’ column is at 5.0V, 25

°C unless otherwise stated. These parameters are for design guidance

only and are not tested.

Note 1:

To ensure these oscillator frequency tolerances, VDD and VSS must be capacitively decoupled as close to

the device as possible. 0.1

μF and 0.01 μF values in parallel are recommended.

OSC1

CLKOUT

I/O pin

(Input)

I/O pin

(Output)

20, 21

Old Value

New Value

PIC12F635E/PQTP 데이터시트(PDF) 165 Page - Microchip Technology

PIC12F635E/PQTP 데이터시트(HTML) 165 Page - Microchip Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

데이터시트 다운로드

링크 URL