DGP8761 datasheet(2/2 Pages) DISCO

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Fully Automatic Grinder/Polisher

DGP8761

Specifications

DGP8761 Operation flow

[1] The robot pick removes a wafer from the cassette and places it on the

positioning table, where centering takes place.

[2] The T1 arm places the wafer on the chuck table.

[3] The wafer proceeds to Z1 for rough grinding.

[4] The wafer proceeds to Z2 for fine grinding.

[5] The wafer proceeds to Z3 for dry polishing (or ultra high-mesh wheel grinding).

[6] [7] The T2 arm removes the wafer from the chuck table and places it on the

spinner table, where cleaning and drying take place.

[8] Transfer to the mounter (DFM2700, DFM2800) or the robot pick returns the

workpiece to the cassette.

Environmental conditions

• Use clean, oil-free air at a dew point of -15 ℃ or less. (Use a residual oil: 0.1 ppm. Filtration rating: 0.01 µm/99.5 % or more).

• Keep room temperature fluctuations within ±1 ℃ of the set value. (Set value should be between 20 - 25 ℃).

• Use grinding water and cleaning water at room temperature +0 - 2 ℃ (fluctuation range: within 2 ℃ in one hour). For cooling water, use water controlled at 1 ℃ in relation to the grinding water.

• The machines should be used in an environment, free from external vibration. Do not install machine near a ventilation opening, heat generation equipment or oil mist generating parts.

• This machine uses water. In case of water leakage, please install the machine on the floor with sufficient waterproofing and drainage treatments.

* All pressures specified above are gauge pressures.

* As the above specification may change due to technical modifications .Please confirm when placing your order.

* For further information, please contact your local sales representative.

www.disco.co.jp

2017.12

Unit

φ 300　（φ 200/φ 300）

In-feed grinding

with wafer rotation

Anomalous in-feed grinding

with wafer rotation

φ 300 Diamond wheel (grinding-axis)

φ 450 Dry polishing pad (DP-axis)

φ 450 CMP pad (CMP-axis）

Thickness

variation

within one

wafer

µm

φ 300mm,

Less than 2.5

(grinding + DP 2

μm removal)

Less than 2.5

(Z1・Z2-axis grinding only)

Thickness

variation

between

wafers

µm

φ 300mm,

Less than ±2.5

(grinding + DP 2

μm removal)

Less than ±2.5

(Z1・Z2-axes grinding only)

Note: When NCG is used: less than ±1.5

Finished

surface

roughness

µm

300mm,

Ra is less than 0.005

(grinding + DP 2

μm removal)

For Z1・Z2-axes grinding only,

Ry is about 0.13 (for # 2000 finishing)

1,690 × 3,315 × 1,800

Approx. 6,700(DP・Poligrind)

Approx. 6,900 (CMP)

Specification

Wafer Diameter

Grinding Method

(Z1 / Z2 axis)

Machine weight

Grinding

Accuracy

Machine dimensions

(W×D×H)

Grinding Method

（Z3 axis）

Grinding Wheels

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